期刊
PHYSICAL REVIEW B
卷 80, 期 24, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.80.241310
关键词
charge exchange; gallium arsenide; III-V semiconductors; photoluminescence; semiconductor quantum wells
资金
- German Ministry of Education and Research [BMBF01BM456]
Photoluminescence studies of a wide asymmetric quantum well hosting two strongly coupled electron layers demonstrate unambiguously how such a system deforms itself due to interlayer charge transfer in a quantizing magnetic field thus manifesting its overall single-layer appearance. The charge distribution inside the quantum well is balanced for total filling factor nu=4N (N integer), while it is imbalanced at most for nu=4N+2. The intersubband energy oscillates enormously with the applied magnetic field and reaches values as large as the electron cyclotron energy for filling factors 4N.
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