期刊
PHYSICAL REVIEW B
卷 80, 期 24, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.80.241407
关键词
buffer layers; crystal symmetry; epitaxial layers; graphene; low energy electron diffraction; monolayers; silicon compounds; thin films
资金
- U.S. Department of Energy [DEAC03-76SF00098, DE-AC04-94AL85000]
- National Science Foundation
- Division Of Materials Research
- Direct For Mathematical & Physical Scien [820382] Funding Source: National Science Foundation
The crystallographic symmetries and spatial distribution of stacking domains in graphene films on 6H-SiC(0001) have been studied by low-energy electron diffraction and dark-field imaging in a low-energy electron microscope. We find that the graphene diffraction spots from two and three atomic layers of graphene have three-fold symmetry consistent with AB (Bernal or rhombohedral) stacking of the layers. On the contrary, graphene diffraction spots from the buffer layer and monolayer graphene have apparent six-fold symmetry, although the three-fold nature of the satellite spots indicates a more complex periodicity in the graphene sheets.
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