期刊
PHYSICAL REVIEW B
卷 80, 期 8, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.80.085312
关键词
aluminium compounds; gallium arsenide; III-V semiconductors; oscillations; quantum Hall effect; Shubnikov-de Haas effect; two-dimensional electron gas
资金
- National Science Council of the Republic of China [96-2112-M110-006-MY3]
- Aim for the Top University Plan of National Sun Yat-sen University, Taiwan
The low-field quantum Hall effect is investigated on a two-dimensional electron system in an AlGaAs/GaAs heterostructure. Magneto-oscillations following the semiclassical Shubnikov-de Haas formula are observed even when the emergence of the mobility gap shows the importance of quantum localization effects. Moreover, the Lifshitz-Kosevich formula can survive as the oscillating amplitude becomes large enough for the deviation to the Dingle factor. The crossover from the semiclassical transport to the description of quantum diffusion is discussed. From our study, the difference between the mobility and cyclotron gaps indicates that some electron states away from the Landau-band tails can be responsible for the semiclassical behaviors under low-field Landau quantization.
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