4.6 Article

Nonlocal charge transport mediated by spin diffusion in the spin Hall effect regime

期刊

PHYSICAL REVIEW B
卷 79, 期 3, 页码 -

出版社

AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.79.035304

关键词

carrier mean free path; gallium arsenide; III-V semiconductors; spin dynamics; spin Hall effect; spin polarised transport

资金

  1. NSF MRSEC [DMR 02132802]
  2. NSF [DMR 0541988, PHY 0646094]
  3. DOE [DEAC 02-98 CH 10886]

向作者/读者索取更多资源

A nonlocal electric response in the spin Hall regime, resulting from spin diffusion mediating charge conduction, is predicted. The spin-mediated transport stands out due to its long-range character, and can give dominant contribution to nonlocal resistance. The characteristic range of nonlocality, set by the spin diffusion length, can be large enough to allow detection of this effect in materials such as GaAs despite its small magnitude. The detection is facilitated by a characteristic nonmonotonic dependence of transresistance on the external magnetic field, exhibiting sign changes and decay.

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