Electronic transport properties of a tilted graphene p-n junction

Spatial manipulation of current flow in graphene could be achieved through the use of a tilted p-n junction. We show through numerical simulation that a pseudo-Hall effect (i.e., nonequilibrium charge and current density accumulating along one of the sides of a graphene ribbon) can be observed under these conditions. The tilt angle and the p-n transition length are two key parameters in tuning the strength of this effect. This phenomenon can be explained using classical trajectory via ray analysis, and is therefore relatively robust against disorder. Lastly, we propose and simulate a three terminal device that allows direct experimental access to the proposed effect.