4.6 Article

Charge transfer excitons and image potential states on organic semiconductor surfaces

期刊

PHYSICAL REVIEW B
卷 80, 期 11, 页码 -

出版社

AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.80.115214

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资金

  1. National Science Foundation [DMR-0804583, DMR-0212302]
  2. Minnesota Supercomputer Institute
  3. Direct For Mathematical & Physical Scien [0946346] Funding Source: National Science Foundation

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We report two types of excited electronic states on organic semiconductor surfaces: image potential states (IPS) and charge transfer excitons (CTE). In the former, an excited electron is localized in the surface-normal direction by the image potential and delocalized in the surface plane. In the latter, the electron is localized in all directions by both the image potential and the Coulomb potential from a photogenerated hole on an organic molecule. We use crystalline pentacene and tetracene surfaces as model systems, and time- and angle-resolved two-photon photoemission spectroscopy to probe the energetics and dynamics of both the IPS and the CTE states. On either pentacene or tetracene surfaces, we observe delocalized image bands and a series of CT excitons with binding energies <0.5 eV below the image-band minimum. The binding energies of these CT excitons agree well with solutions to the atomic-H-like Schrodinger equation based on the image potential and the electron-hole Coulomb potential. We hypothesize that the formation of CT excitons should be general to the surfaces of organic semiconductors where the relatively narrow valance-band width facilitates the localization of the hole and the low dielectric constant ensures strong electron-hole attraction.

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