期刊
PHYSICAL REVIEW B
卷 79, 期 10, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.79.104511
关键词
ab initio calculations; boron; doping; electron-phonon interactions; silicon compounds; superconducting transition temperature; two-photon processes; type I superconductors
资金
- NSF [DMR07-05941]
- U.S. DOE [DE-AC02-05CH11231]
We investigate the origin of superconductivity in boron-doped silicon carbide using a first-principles approach. The strength of the electron-phonon coupling calculated for cubic SiC at the experimental doping level suggests that the superconductivity observed in this material is phonon mediated. Analysis of the 2H-SiC, 4H-SiC, 6H-SiC, and 3C-SiC polytypes indicates that superconductivity depends on the stacking of the Si and C layers and that the cubic polytype will exhibit the highest transition temperature. In contrast to the cases of silicon and diamond, acoustic phonons are found to play a major role in the superconductivity of silicon carbide.
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