期刊
PHYSICAL REVIEW B
卷 79, 期 10, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.79.104501
关键词
doping profiles; electronic density of states; Fermi level; Hall effect; high-temperature superconductors; lattice constants; magnetoresistance; transport processes
资金
- Natural Science Foundation of China, the Ministry of Science and Technology of China (973 project) [2006CB01000, 2006CB921802]
- Chinese Academy of Sciences (ITSNEM)
Superconductivity was achieved in PrFeAsO by partially substituting Pr3+ with Sr2+. The electrical transport properties and structure of this superconductor Pr1-xSrxFeAsO at different doping levels (x=0.05 similar to 0.25) were investigated systematically. It was found that the lattice constants (a and c axes) increase monotonously with Sr or hole concentration. The superconducting transition temperature at about 16.3 K (95% rho(n)) was observed around the doping level of 0.20 similar to 0.25. A detailed investigation was carried out in the sample with doping level of x=0.25. The domination of holelike charge carriers in this material was confirmed by Hall-effect measurements. The magnetoresistance (MR) behavior can be well described by a simple two-band model. The upper critical field of the sample with T-c=16.3 K (x=0.25) was estimated to be beyond 45 T. Our results suggest that the hole-doped samples may have higher upper critical fields comparing to the electron-doped ones, due to the higher quasiparticle density of states at the Fermi level.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据