期刊
PHYSICAL REVIEW B
卷 79, 期 7, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.79.073105
关键词
conduction bands; density functional theory; II-VI semiconductors; indium compounds; optical constants; red shift; valence bands; wide band gap semiconductors; zinc compounds
资金
- U.S. Department of Energy (DOE) [DE-AC3608GO28308]
Ternary oxides formed from zinc and indium have demonstrated potential for commercial optoelectronic applications. We present state-of-the-art hybrid density functional theory calculations for Zn-poor and Zn-rich compositions of the crystalline In2O3(ZnO)(n) compounds. We reveal the origin of the redshift in optical transitions compared to the two component oxides: symmetry forbidden band-edge transitions in In2O3 are overcome on formation of the superlattices, with Zn-O contributions to the top of the valence band. Increasing n results in the localization of the conduction-band minimum on the In-O networks. This enhanced localization explains why Zn-poor compounds (lower n) exhibit optimal conductivity.
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