期刊
PHYSICAL REVIEW B
卷 78, 期 20, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.78.205403
关键词
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资金
- NSF [DMR-06545698, ECCS-0802125]
- Nanoelectronics Research Initiative (NRI) through the Midwest Institute for Nanoelectronics Discovery (MIND)
The transport properties of carriers in semiconducting graphene nanoribbons are studied by comparing the effects of phonon, impurity, and line-edge roughness scattering. It is found that scattering from impurities located at the surface of nanoribbons and from acoustic phonons are as important as line-edge roughness scattering. The relative importance of these scattering mechanisms varies with the temperature, Fermi-level location, and the width of the ribbons. Based on the analysis, strategies for improvement of low-field mobility are described.
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