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注意:仅列出部分参考文献,下载原文获取全部文献信息。Local electronic structure near mn acceptors in InAs:: Surface-induced symmetry breaking and coupling to host states
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Direct evidence for shallow acceptor states with nonspherical symmetry in GaAs -: art. no. 026407
[Anonymous]
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Electrostatic potential for a hyperbolic probe tip near a semiconductor
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Many-particle interaction in tunneling spectroscopy of impurity states on the InAs(110) surface
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STM measurements on the InAs(110) surface directly compared with surface electronic structure calculations
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Interplay between tip-induced band bending and voltage-dependent surface corrugation on GaAs(110) surfaces
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