相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。Determination of the branch-point energy of InN: Chemical trends in common-cation and common-anion semiconductors
P. D. C. King et al.
PHYSICAL REVIEW B (2008)
Universality of electron accumulation at wurtzite c- and a-plane and zinc-blende InN surfaces
P. D. C. King et al.
APPLIED PHYSICS LETTERS (2007)
Effect of surface oxidation on electron transport in InN thin films
V. Lebedev et al.
JOURNAL OF APPLIED PHYSICS (2007)
Doping-dependence of subband energies in quantized electron accumulation at InN surfaces
T. D. Veal et al.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE (2007)
Quantized electron accumulation states in indium nitride studied by angle-resolved photoemission spectroscopy
Leyla Colakerol et al.
PHYSICAL REVIEW LETTERS (2006)
Scanning tunnelling spectroscopy of quantized electron accumulation at InxGa1-xN surfaces
TD Veal et al.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE (2006)
Detailed analysis of the dielectric function for wurtzite InN and In-rich InAlN alloys
R Goldhahn et al.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE (2006)
Intrinsic electron accumulation at clean InN surfaces
I Mahboob et al.
PHYSICAL REVIEW LETTERS (2004)
Surface chemical modification of InN for sensor applications
H Lu et al.
JOURNAL OF APPLIED PHYSICS (2004)
Investigation of multiple carrier effects in InN epilayers using variable magnetic field Hall measurements
CH Swartz et al.
JOURNAL OF CRYSTAL GROWTH (2004)
Origin of electron accumulation at wurtzite InN surfaces -: art. no. 201307
I Mahboob et al.
PHYSICAL REVIEW B (2004)
Temperature dependence of the fundamental band gap of InN
J Wu et al.
JOURNAL OF APPLIED PHYSICS (2003)
On the band gap of indium nitride
BR Nag
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS (2003)
Surface charge accumulation of InN films grown by molecular-beam epitaxy
H Lu et al.
APPLIED PHYSICS LETTERS (2003)
Evolution of electron states at a narrow-gap semiconductor surface in an accumulation-layer formation process
S Abe et al.
PHYSICAL REVIEW B (2002)