期刊
PHYSICAL REVIEW B
卷 77, 期 12, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.77.125305
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资金
- EPSRC [EP/E031595/1] Funding Source: UKRI
- Engineering and Physical Sciences Research Council [EP/E031595/1] Funding Source: researchfish
The one-electron potential, carrier concentration profile, quantized subband state energies, and parallel dispersion relations are calculated for an accumulation layer at a semiconductor surface by solving Poisson's equation within a modified Thomas-Fermi approximation and numerically solving the Schrodinger equation for the resulting potential well. A nonparabolic conduction band, described within the Kane k.p approximation, is incorporated in the model. Example calculations are performed for a typical clean InN surface and for a variety of surface state densities and bulk carrier concentrations. Agreement is found between the model calculations and experimental measurements of the subband energies and dispersions at c-plane InN surfaces from electron tunneling spectroscopy and angle resolved photoemission spectroscopy.
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