期刊
PHYSICAL REVIEW B
卷 78, 期 4, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.78.045311
关键词
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资金
- National Research Foundation of Korea [과C6A1612, R0A-2007-000-20044-0] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
The influence of a visible Ar+-laser (488 nm) illumination on photoluminescence (PL) from ZnO nanocrystals excited by He-Cd laser (325 nm) at various excitation intensities and temperatures was investigated. A reversible quenching of the UV near-band-edge emission under Ar+-laser illumination was observed. The quenching effect increases with decreasing temperature and He-Cd laser intensity at fixed intensity of Ar+-laser. It is found that the recovery time of the initial PL intensity depends on temperature and Ar+-laser exposure time. At room temperature the PL restored the initial intensity instantly after the turning off the Ar+-laser illumination; however at 10 K this process took several minutes. The proposed mechanism of the observed quenching effect implies an appearance of the additional recombination channel under a visible light illumination due to the recharging of oxygen-vacancy states in the surface depletion zone.
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