期刊
PHYSICAL REVIEW B
卷 78, 期 19, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.78.195409
关键词
carbon; electronic density of states; energy gap; impurity states; nanostructured materials; tunnelling
资金
- Petroleum Research Fund [43966-AC10]
The instanton approach to the in-gap fluctuation states is applied to the spectrum of biased bilayer graphene. It is shown that the density of states falls off with energy measured from the band edge as nu(epsilon)proportional to exp(-parallel to epsilon/epsilon(t)parallel to(3/2)), where the characteristic tail energy, epsilon(t), scales with the concentration of impurities, n(i), as n(i)(2/3). While the bare energy spectrum is characterized by two energies: the bias-induced gap, V, and interlayer tunneling, t(perpendicular to), the tail, epsilon(t), contains a single combination V(1/3)t(perpendicular to)(2/3). We show that the above expression for nu(epsilon) in the tail actually applies all the way down to the midgap.
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