Effects of hydrostatic pressure and aluminum concentration on the conduction-electron g factor in GaAs-(Ga,Al) As quantum wells under in-plane magnetic fields

The effects of hydrostatic pressure and aluminum concentration on the conduction-electron effective Lande g factor in semiconductor GaAs-Ga1-xAlxAs quantum wells under in-plane magnetic fields are presented. Numerical calculations of the conduction-electron Lande g factor are performed by taking into account the nonparabolicity and anisotropy of the conduction band via the Ogg-McCombe Hamiltonian as well as the effects of aluminum concentration and applied hydrostatic pressure. Theoretical results are given as functions of the aluminum concentration in the Ga1-xAlxAs barrier, orbit-center position, applied in-plane magnetic field, hydrostatic pressure, and quantum-well width, and found in good agreement with experimental measurements in GaAs-Ga1-xAlxAs quantum wells for various values of the aluminum concentration x in the absence of hydrostatic pressure.