相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。Simulated [111] Si-SiGe terahertz quantum cascade laser
L. Lever et al.
APPLIED PHYSICS LETTERS (2008)
Intersubband carrier scattering in n- and p-Si/SiGe quantum wells with diffuse interfaces
A. Valavanis et al.
PHYSICAL REVIEW B (2008)
Terahertz quantum cascade lasers with copper metal-metal waveguides operating up to 178 K
Mikhail A. Belkin et al.
OPTICS EXPRESS (2008)
An n-type SiGe/Ge QC structure utilizing the deep Ge quantum well for electron at the Γ point
Genquan Han et al.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2007)
Intervalley splitting and intersubband transitions in n-type Si/SiGe quantum wells:: Pseudopotential vs. effective mass calculation
A. Valavanis et al.
PHYSICAL REVIEW B (2007)
Valley splitting theory of SiGe/Si/SiGe quantum wells
Mark Friesen et al.
PHYSICAL REVIEW B (2007)
Theory of the channel-width dependence of the low-temperature hole mobility in Ge-rich narrow square Si/SiGe/Si quantum wells
Doan Nhat Quang et al.
PHYSICAL REVIEW B (2007)
Silicon-based injection lasers using electronic intersubband transitions in the L valleys
Kristina Driscoll et al.
APPLIED PHYSICS LETTERS (2006)
Sharp n-type doping profiles in Si/SiGe heterostructures produced by atomic hydrogen etching
J. Zhang et al.
SURFACE SCIENCE (2006)
Influence of doping density on electron dynamics in GaAs/AlGaAs quantum cascade lasers
V. D. Jovanovic et al.
JOURNAL OF APPLIED PHYSICS (2006)
Generalized effective-mass approach for n-type metal-oxide-semiconductor field-effect transistors on arbitrarily oriented wafers
A Rahman et al.
JOURNAL OF APPLIED PHYSICS (2005)
Electromagnetic modeling of terahertz quantum cascade laser waveguides and resonators
S Kohen et al.
JOURNAL OF APPLIED PHYSICS (2005)
Monte Carlo modeling of the electron mobility in strained Si1-x,Gex layers on arbitrarily oriented Si1-yGey substrates
S Smirnov et al.
SOLID-STATE ELECTRONICS (2004)
Self-consistent energy balance simulations of hole dynamics in SiGe/Si THz quantum cascade structures
Z Ikonic et al.
JOURNAL OF APPLIED PHYSICS (2004)
Valley splitting in low-density quantum-confined heterostructures studied using tight-binding models
TB Boykin et al.
PHYSICAL REVIEW B (2004)
Si/SiGe heterostructures: from material and physics to devices and circuits
DJ Paul
SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2004)
Optical dephasing of coherent intersubband transitions in a quasi-two-dimensional electron gas -: art. no. 205307
I Waldmüller et al.
PHYSICAL REVIEW B (2004)
Terahertz quantum-cascade laser at λ≈100 μm using metal waveguide for mode confinement
BS Williams et al.
APPLIED PHYSICS LETTERS (2003)
Intersubband absorption linewidth in GaAs quantum wells due to scattering by interface roughness, phonons, alloy disorder, and impurities
T Unuma et al.
JOURNAL OF APPLIED PHYSICS (2003)
Nonequilibrium Green's function theory for transport and gain properties of quantum cascade structures
SC Lee et al.
PHYSICAL REVIEW B (2002)
Intersubband electroluminescence from Si/SiGe cascade emitters at terahertz frequencies
SA Lynch et al.
APPLIED PHYSICS LETTERS (2002)
First-order intervalley scattering in low-dimensional systems
F Monsef et al.
PHYSICAL REVIEW B (2002)
Terahertz semiconductor-heterostructure laser
R Köhler et al.
NATURE (2002)
Intersubband hole-phonon and alloy disorder scattering in SiGe quantum wells
Z Ikonic et al.
PHYSICAL REVIEW B (2001)
300 K operation of a GaAs-based quantum-cascade laser at λ≈9 μm
H Page et al.
APPLIED PHYSICS LETTERS (2001)
Intersubband electroluminescence from silicon-based quantum cascade structures
G Dehlinger et al.
SCIENCE (2000)