相关参考文献
注意：仅列出部分参考文献，下载原文获取全部文献信息。Modeling HfO2/SiO2/Si interface
J. L. Gavartin et al.
MICROELECTRONIC ENGINEERING (2007)
Theoretical study of the insulator/insulator interface: Band alignment at the SiO2/HfO2 junction
Onise Sharia et al.
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Effects of Al addition on the native defects in hafnia
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APPLIED PHYSICS LETTERS (2006)
Impact of deposition and annealing temperature on material and electrical characteristics of ALD HfO2
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JOURNAL OF THE ELECTROCHEMICAL SOCIETY (2004)
High-κ/metal-gate stack and its MOSFET characteristics
R Chau et al.
IEEE ELECTRON DEVICE LETTERS (2004)
Soft x-ray photoemission studies of the HfO2/SiO2/Si system
S Sayan et al.
APPLIED PHYSICS LETTERS (2002)
High-κ gate dielectrics:: Current status and materials properties considerations
GD Wilk et al.
JOURNAL OF APPLIED PHYSICS (2001)
Theoretical and experimental investigation of ultrathin oxynitrides and the role of nitrogen at the Si-SiO2 interface
AA Demkov et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (2000)
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