相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。First-principles calculation of the O vacancy in ZnO: A self-consistent gap-corrected approach
Tula R. Paudel et al.
PHYSICAL REVIEW B (2008)
Theoretical study of the phosphorus vacancy in ZnGeP2
Xiaoshu Jiang et al.
PHYSICAL REVIEW B (2006)
Theoretical study of cation-related point defects in ZnGeP2 -: art. no. 205212
XS Jiang et al.
PHYSICAL REVIEW B (2005)
Temperature dependence of polarized absorption bands in p-type CdGeAs2 -: art. no. 023105
LH Bai et al.
JOURNAL OF APPLIED PHYSICS (2005)
Theoretical study of the group-IV antisite acceptor defects in CdGeAs2
MA Blanco et al.
APPLIED PHYSICS LETTERS (2004)
Donor-acceptor pair emission near 0.55 eV in CdGeAs2
LH Bai et al.
JOURNAL OF APPLIED PHYSICS (2004)
Design of shallow donor levels in diamond by isovalent-donor coupling
D Segev et al.
PHYSICAL REVIEW LETTERS (2003)
Band structure of CdGeAs2 near the fundamental gap -: art. no. 165204
S Limpijumnong et al.
PHYSICAL REVIEW B (2002)