4.6 Article

Enhanced current quantization in high-frequency electron pumps in a perpendicular magnetic field

期刊

PHYSICAL REVIEW B
卷 78, 期 23, 页码 -

出版社

AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.78.233311

关键词

aluminium compounds; gallium arsenide; galvanomagnetic effects; high-frequency effects; III-V semiconductors; quantum interference phenomena; semiconductor quantum dots

资金

  1. UK National Measurement System's Quantum Metrology Programme
  2. AFRL [FA9453-07-C-0207]
  3. EPSRC-GB QIP IRC [GR/S82176/01]
  4. EPSRC [EP/D008506/1] Funding Source: UKRI
  5. Engineering and Physical Sciences Research Council [GR/S82176/01, EP/D008506/1] Funding Source: researchfish

向作者/读者索取更多资源

We present experimental results of high-frequency quantized charge pumping through a quantum dot formed by the electric field arising from applied voltages in a GaAs/AlGaAs system in the presence of a perpendicular magnetic field B. Clear changes are observed in the quantized current plateaus as a function of applied magnetic field. We report on the robustness in the length of the quantized plateaus and improvements in the quantization as a result of the applied B field.

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