4.6 Article

High performance n-type and ambipolar small organic semiconductors for organic thin film transistors

期刊

PHYSICAL CHEMISTRY CHEMICAL PHYSICS
卷 16, 期 41, 页码 22448-22457

出版社

ROYAL SOC CHEMISTRY
DOI: 10.1039/c4cp01700e

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资金

  1. National Natural Science Foundation of China [20721061, 21190034, 21233001, 51033006, 51222306, 91027043, 91222203, 91233205]
  2. China-Denmark Co-project [60911130231]
  3. Ministry of Science and Technology of China [2011CB808400, 2011CB932300, 2013CB933403, 2013CB933500, 2012CB933102]
  4. Beijing NOVA Programme [Z131101000413038]
  5. Beijing Local College Innovation Team Improve Plan [IDHT20140512]
  6. Chinese Academy of Sciences, Specialized Research Fund for the Doctoral Program of Higher Education [SRFDP. 20110211130001]
  7. Fundamental Research Funds for the Central Universities
  8. 111 Project
  9. TRR61 (NSFC-DFG Transregio Project)

向作者/读者索取更多资源

Remarkable progress has recently been achieved in n-type and ambipolar OFETs. In this mini review, we will highlight the representative development of high performance n-type and ambipolar organic semiconductors (OSCs) especially for those n-type small OSCs with thin film mobilities >1 cm(2) V-1 s(-1), and ambipolar small OSCs with both hole and electron mobilities of over 0.1 cm(2) V-1 s(-1). This overview shall provide a meaningful guideline for further development of high performance n-type and ambipolar materials and devices.

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