期刊
PHYSICAL CHEMISTRY CHEMICAL PHYSICS
卷 16, 期 31, 页码 16367-16372出版社
ROYAL SOC CHEMISTRY
DOI: 10.1039/c4cp01266f
关键词
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资金
- NRF (NRL program) [2009-0079462]
- Nanomaterial Technology Development Program through the NRF of Korea [2012M3A7B4034985]
- Brain Korea 21 Plus Program
On a single ZnO nanowire (NW), we fabricated an inverter-type device comprising a Schottky diode (SD) and field-effect transistor (FET), aiming at 1-dimensional (1D) electronic circuits with low power consumption. The SD and adjacent FET worked respectively as the load and driver, so that voltage signals could be easily extracted as the output. In addition, NW FET with a transparent conducting oxide as top gate turned out to be very photosensitive, although ZnO NW SD was blind to visible light. Based on this, we could achieve an array of photo-inverter cells on one NW. Our nonclassical inverter is regarded as quite practical for both logic and photo-sensing due to its performance as well as simple device configuration.
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