期刊
PHYSICAL CHEMISTRY CHEMICAL PHYSICS
卷 16, 期 34, 页码 18472-18477出版社
ROYAL SOC CHEMISTRY
DOI: 10.1039/c4cp02301c
关键词
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资金
- Basic Science Research Program through the National Research Foundation of Korea (NRF)
- ministry of Education, Science and Technology [NRF-2014M1A3A3A02034707, 2012-047047]
- National Research Foundation of Korea [2014M1A3A3A02034707, 2011-0031639] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
We report on tuning of the interfacial properties of a highly sensitive organic photodiode by introducing a buffer layer between the anode and the semiconductor layer. The effects of different buffer layers consisting of a self-assembled monolayer (SAM), PEDOT:PSS, and pentacene on the morphology and crystallinity of the upper-deposited bulk heterojunction semiconductor layer are carefully analyzed combined with electrical analysis. The active layer is controlled to be nearly homogeneous and to have low crystallinity by using a SAM or PEDOT:PSS buffer layers, whereas a highly crystalline morphology is realized by using the pentacene buffer layer. When exposed to light pulses, the external quantum efficiency and thus the photocurrent are slightly higher for the PEDOT:PSS-based photodiode; however the dark current is the lowest for the pentacene-based photodiode. We discuss the origin of the high sensitivity (a detectivity of 1.3 x 10(12) Jones and a linear dynamic range of 95 dB) of the pentacene-based photodiode, particularly in terms of the morphology-driven tow dark current.
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