期刊
PHYSICAL CHEMISTRY CHEMICAL PHYSICS
卷 15, 期 3, 页码 1006-1013出版社
ROYAL SOC CHEMISTRY
DOI: 10.1039/c2cp43408c
关键词
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资金
- National Basic Research Program of China (973 Program) [2013CB632404]
- National Natural Science Foundation of China [50902068, 51272101]
- Fundamental Research Funds for the Central University [1116020406]
- Open Research Fund of the State Key Laboratory of Bioelectronics, Southeast University
Photoelectrochemical water splitting is an attractive method to produce H-2 fuel from solar energy and water. Ion doping with higher valence states was used widely to enhance the photocurrent of an n-type oxide semiconductor. In this study, the different doping sites and the photoelectrochemical properties of Mo6+, W6+ and Sn4+-doped BiVO4 were studied systematically. The results suggested that Mo6+ or W6+-doped BiVO4 had a much higher photocurrent while the photocurrent of Sn4+-doped BiVO4 did not change obviously. Raman and XPS were used to identify the doping sites in the BiVO4 crystal lattice. It was found that Mo or W substituted V sites but Sn did not substitute Bi sites. Results of theoretical calculation indicated that a higher formation energy and lower solubility of impurity ions led to serious SnO2 segregation on the surface of the Sn4+-doped BiVO4 thin film, which was the main reason for the poor performance of Sn-doped BiVO4. The higher formation energy of Sn4+ came from the large mismatch of ion radius and different outer shell electron distribution. These results can offer guidance in choosing suitable doping ions for other semiconductor photoelectrodes.
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