4.6 Article

Hole conductivity in oxygen-excess BaTi1-xCaxO3-x+d

期刊

PHYSICAL CHEMISTRY CHEMICAL PHYSICS
卷 15, 期 48, 页码 20943-20950

出版社

ROYAL SOC CHEMISTRY
DOI: 10.1039/c3cp52475b

关键词

-

资金

  1. 111 Program [B08040]

向作者/读者索取更多资源

BaTiO3 containing Ca substituted for Ti as an acceptor dopant, with oxygen vacancies for charge compensation and processed in air, is a p-type semiconductor. The hole conductivity is attributed to uptake of a small amount of oxygen which ionises by means of electron transfer from lattice oxide ions, generating O- ions as the source of p-type semiconductivity. Samples heated in high pressure O-2, up to 80 atm, absorb up to twice the amount expected from the oxygen vacancy concentration. This is attributed to incorporation of superoxide, O2-, ions in oxygen vacancies associated with the Ca2+ dopant and is supported by Raman spectroscopy results.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.6
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据