4.6 Article

MoS2-an integrated protective and active layer on n(+)p-Si for solar H-2 evolution

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PHYSICAL CHEMISTRY CHEMICAL PHYSICS
卷 15, 期 46, 页码 20000-20004

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ROYAL SOC CHEMISTRY
DOI: 10.1039/c3cp52890a

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  1. Danish National Research Foundation's Center for Individual Nanoparticle Functionality [DNRF54]
  2. Danish Ministry of Science

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A new MoS2 protected n(+)p-junction Si photocathode for the renewable H-2 evolution is presented here. MoS2 acts as both a protective and an electrocatalytic layer, allowing H-2 evolution at 0 V vs. RHE for more than 5 days. Using a MoSx surface layer decreases the overpotential for H-2 evolution by 200 mV.

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