期刊
PHYSICAL CHEMISTRY CHEMICAL PHYSICS
卷 14, 期 42, 页码 14589-14595出版社
ROYAL SOC CHEMISTRY
DOI: 10.1039/c2cp43125d
关键词
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资金
- NSFC [21004019, 51173040, 91023039, 21021091]
- Ministry of Science and Technology of China [2011AA050523, 2010DFB63530]
- Chinese Academy of Sciences [KGCX2-YW-399 + 9-1]
- Beijing NOVA Program [2010B038]
- SRFDP [20100036120007]
- Fundamental Research Funds for the Central Universities, China [10MG32]
A solution-processed vanadium oxide (s-VOx) anode buffer layer on an indium-tin-oxide (ITO) electrode was used instead of PEDOT:PSS for improving the stability and photovoltaic performance of the polymer solar cells (PSCs). The s-VOx layer was prepared by spin-coating a vanadyl acetylacetonate (VO(acac)(2)) isopropyl alcohol solution on the ITO electrode and then thermal annealing at 150 degrees C for 10 min. The s-VOx oxide layer is highly transparent in the visible range and shows effective hole collection property. The photovoltaic performance of the s-VOx buffer layer was studied by fabricating the PSCs based on poly(3-hexylthiophene) (P3HT) as an electron donor and four soluble fullerene derivatives, [6,6]-phenyl-C-61-butyric acid methyl ester (PC60BM), [6,6]-phenyl-C-71-butyric acid methyl ester (PC70BM), indene-C-60 bisadduct (IC(60)BA), and indene-C-70 bisadduct (IC(70)BA), as electron acceptors. The PSCs with the s-VOx buffer layer show improved performance in comparison with the traditional devices with the PEDOT:PSS buffer layer on ITO, no matter which fullerene derivative was used as an acceptor. The power conversion efficiency of the PSC based on P3HT:IC(70)BA (1 : 1, w/w) with the s-VOx anode buffer layer reached 6.35% under the illumination of AM1.5G 100 mW cm(-2).
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