期刊
PHYSICAL CHEMISTRY CHEMICAL PHYSICS
卷 13, 期 34, 页码 15418-15422出版社
ROYAL SOC CHEMISTRY
DOI: 10.1039/c1cp21544b
关键词
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资金
- Australian Commonwealth Government
- Research Centre for Computational Science, National Institute of National Sciences, Japan
We show that the properties of a new class of functional materials, silicon nanosheets modified with phenyl groups and H atoms, are highly promising for applications such as electronic devices. This novel material retains the sp(3) structure after functionalisation, resulting in a wide (direct) band gap of 1.92 eV.
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