期刊
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS
卷 8, 期 6, 页码 571-576出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/pssr.201409034
关键词
energy band alignment; functional oxides; transitivity; electronic structure; photoelectron spectroscopy
资金
- German Science Foundation (DFG) within the collaborative research center [SFB 595]
- German Science Foundation (DFG) within the Research Training Group (GRK 1037) TICMO (Tunable Integrated Components for Microwaves and Optics)
- state of Hessen within the LOEWE center AdRIA (Adaptronik-Research, Innovation, Application)
- Slovenian Research Agency [P2-0105, 1000-10-310134, J2-4173]
- Romanian Ministry of National Education-UEFISCDI [PN-II-ID-PCCE-2011-2-0006, 3/2012]
The energy band alignment at interfaces between different materials is a key factor, which determines the function of electronic devices. While the energy band alignment of conventional semiconductors is quite well understood, systematic experimental studies on oxides are still missing. This work presents an extensive study on the intrinsic energy band alignment of a wide range of functional oxides using photoelectron spectroscopy with in-situ sample preparation. The studied materials have particular technological importance in diverse fields as solar cells, piezotronics, multiferroics, photoelectrochemistry and oxide electronics. Particular efforts have been made to verify the validity of transitivity, in order to confirm the intrinsic nature of the obtained band alignment and to understand the underlying principles. Valence band offsets up to 1.6 eV are observed. The large variation of valence band maximum energy can be explained by the different orbital contributions to the density of states in the valence band. The framework provided by this work enables the general understanding and prediction of energy band alignment at oxide interfaces, and furthermore the tailoring of energy level matching for charge transfer in functional oxides. (C) 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
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