期刊
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS
卷 8, 期 7, 页码 658-662出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/pssr.201409106
关键词
self-catalysed growth; InAs; nanowires; bare silicon; droplet epitaxy
资金
- Engineering and Physical Sciences Research Council [EP/G015570/1, EP/K023373/1, EP/G06556X/1] Funding Source: researchfish
- EPSRC [EP/G06556X/1, EP/G015570/1, EP/K023373/1] Funding Source: UKRI
We demonstrate the self-catalyst growth of vertically aligned InAs nanowires on bare Si(111) by droplet epitaxy. The growth conditions of indium droplets suitable for nucleation and growth of nanowires have been identified. We have then realized vertically aligned and non-tapered InAs nanowires on bare Si(111) substrates through optimal indium droplets. It was found that the lateral dimensions and density of nanowires are defined by the indium droplets. This technique unravels a controllable, cost-effective and time-efficient route to fabricating functional monolithic hybrid structures of InAs nanowires on silicon. (C) 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
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