期刊
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS
卷 6, 期 11, 页码 415-417出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/pssr.201206387
关键词
Ge2Sb2Te5; molecular beam epitaxy; GIXRD; RHEED; HRTEM
资金
- Deutsche Forschungsgemeinschaft [BR 1723/3-1]
- Japan Science and Technology Agency through an international research cooperation grant
- DAAD
Epitaxial Ge2Sb2Te5 thin layers were successfully grown in the metastable cubic phase on both slightly lattice-mismatched (GaSb) and highly lattice-mismatched (Si) templates. The higher quality of the films grown on (111)-oriented substrates is attributed to the tendency to form layered structures in the stable bulk phase as well as to the nature of distortion in the metastable cubic phase. (c) 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
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