期刊
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS
卷 5, 期 5-6, 页码 205-207出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/pssr.201105182
关键词
resistive switching; carbon nanotubes; memory; RRAM
资金
- NSF of China [60925003]
- MOST [2009AA03Z315, 2010CB934203]
The carbon nanotube/oxide/metal/crossed carbon nanotube (COMC) structure was first fabricated and demonstrated to be capable of stable bipolar resistive switching. The linewidth of the crossbar is smaller than 20 nm, and can be further scaled down by using smaller carbon nanotubes (CNTs). The reset current is as small as 10 mu A, which is of great advantage for low power applications. Electroforming-free planar devices were also fabricated to be compared with COMC devices. The resistive switching with CNT electrodes could be extended to other one-dimensional nanowires or nanotubes with cylindrical surface. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
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