p-type conducting ZnO : P microwires prepared by direct carbothermal growth

Phosphorous-doped (ZnO:P) and undoped ZnO wires with diameter of several micrometers and length of several hundred micrometers were thermally grown directly on phosphorus pentoxide doped and undoped ZnO:graphite targets, respectively. The cathodoluminescence spectra of single ZnO:P microwires show three typical acceptor-related emissions which are attributed to (A(0), X), (e, A(0)), and DAP. Three-terminal, gate voltage dependent electrical measurements of back-gate field effect transistors with the microwires as channels indicate reproducibly that undoped ZnO and ZnO:P microwires are n-type and p-type conductive, respectively. The p-type conductivity was found to be stable over more than six months. (C) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.