期刊
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS
卷 250, 期 12, 页码 2727-2731出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/pssb.201300088
关键词
chemical vapor deposition; h-BN; hexagonal boron nitride
资金
- Office of Energy Research, Office of Basic Energy Sciences, Materials Sciences and Engineering Division, of the U.S. Department of Energy [DE-AC02-05CH11231]
- Office of Naval Research under MURI [N00014-09-1-1066]
- Air Force Office of Scientific Research [FA9950-10-1-0451]
- NSF
The two-dimensional sp(2)-bonded material hexagonal boron nitride (h-BN) has unique electronic, thermal, mechanical, and chemical properties. It has recently found use as an ideal substrate for graphene-based electronic devices. We here describe synthesis of mono- to few-layer h-BN films using low pressure chemical vapor deposition (LPCVD) from borazine, with nickel, copper and platinum employed as catalytic substrates, and transfer of some of these films using a non-polymer method. Characterization of the films via Raman spectroscopy and transmission electron microscopy (TEM) is performed. Chemical vapor deposition synthesis of hexagonal boron nitride from borazine using metallic substrates. (C) 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
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