期刊
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS
卷 248, 期 7, 页码 1690-1695出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/pssb.201046560
关键词
density functional theory; graphene; multilayers; screening effects; SiC
资金
- Chinese Academy of Sciences [2011CB921200]
- National Natural Science Funds for Distinguished Young Scholars
We have investigated the electronic structures of graphene layers epitaxially grown on the 4H-SiC (000 (1) over bar) surface up to six layers by using first-principles methods. The graphene layers grown on an ideal SiC interface are found to be p doped, whereas, those grown on a C-deficient SiC interface are found to be n doped. We discuss the interlayer screening effects from the positions of the Fermi levels of each layer in our simulation. Interestingly, we find that the substrate may induce small atomic distortions in the graphene layers which could open about a 10 meV band gap in each graphene layer. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
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