期刊
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS
卷 246, 期 11-12, 页码 2514-2517出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/pssb.200982356
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资金
- Cambridge Integrated Knowledge Centre (CIKC)
- Cambridge-Nokia partnership
- Palermo University
- The Royal Society
- European Research Council [NANOPOTS]
Graphene nanoribbons (GNRs) are the counterpart of nanotubes in graphene nanoelectronics. The search for a cheap, parallel, and deterministic technique for practical implementation of these structures is still open. Nanowire lithography (NWL) consists in using nanowires (NWs) as etch masks to transfer their one-dimensional morphology to an underlying substrate. Here, we show that oxidized silicon NWs (SiNWs) are a simple and compatible system to implement NWL on graphene. The SiNWs morphology is transferred onto a graphene flake by a low-power O-2 plasma in a deep-reactive-ion-etcher. The process leads to conformal GNRs with diameter comparable to the overlaying NW lateral dimensions. The diameter can be further reduced by Multiple O-2 etching steps. Field-effect measurements show the transition to a semiconductor for low diameters. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
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