期刊
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
卷 210, 期 7, 页码 1358-1362出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/pssa.201329014
关键词
doping; ferromagnetism; magnetron sputtering; photoluminescence; thin films; ZnO
资金
- Natural Science Foundation of China [51101027]
- Program for New Century Excellent Talents In Heilongjiang Provincial University, Youth Scholar Backbone of General Colleges and Universities of Heilongjiang Province [1251G004]
Cr-doped ZnO thin films have been prepared on silicon (100) substrates by a radio-frequency (RF) magnetron sputtering method. The crystallographic structures, optical, and magnetic properties of the thin films are investigated by means of X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), photoluminescence (PL), and physical properties measurement system (PPMS), respectively. The XPS results confirm that the chemical-bonding state of the doped Cr ions is +3. XRD analyses reveal that the Cr ions successfully replace Zn atoms and incorporate into the crystal-lattice positions of ZnO. Magnetic measurements reveal that all the samples have ferromagnetic features and saturation magnetization increases on increasing the dopant concentration. Room-temperature PL spectra show an ultraviolet (UV) emission at 380nm and a green emission at 500nm, whose intensity is greatly increased with increased Cr dopant. Moreover, the results of PL further testify that ferromagnetism (FM) is an intrinsic property of the Cr-doped ZnO films and FM can be described by bound magnetic polaron (BMP) models with respect to defect-bound carriers. (C) 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
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