期刊
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
卷 209, 期 3, 页码 456-460出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/pssa.201100317
关键词
efficiency droop; group-III nitrides; light-emitting diodes; numerical simulation; quantum corrections
资金
- Ministry of Education and Science of the Russian Federation [02.527.11.0011]
In this paper, we report on the results of experimental and theoretical study of a promising way for suppression of the efficiency droop with current in InGaN-based light emitting diodes. Simulations carried out using a drift-diffusion approach with quantum-mechanical corrections clearly show that non-radiative Auger recombination is the principal mechanism limiting the device performance at high-injection level. New design of LED heterostructure with short-period superlattice in the active region is proposed and assessed theoretically. Experimentally, the implementation of the structure design in high-power devices has resulted in substantial suppression of the efficiency droop compared to conventional multiquantum-well InGaN LEDs. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
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