期刊
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
卷 209, 期 10, 页码 2073-2077出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/pssa.201228219
关键词
DC bias stress effect; organic thin-film transistors; parylene-C; pentacene
资金
- Japan Science and Technology Agency (JST)
We have systematically investigated the reliability of organic thin-film transistors (TFTs) using polychloro-p-xylylene (parylene-C) as a gate dielectric material. The fabricated organic TFT devices exhibited positive bias shifts with negative DC gate-source voltages; however, no hysteresis was observed in the transfer characteristics for the tested TFT devices. Moreover, this tendency was enhanced with increasing annealing temperatures, whereby X-ray diffraction (XRD) results revealed that the crystallinity of the parylene-C layers increased with thermal annealing. As a result the total dipole moments normal to the surface of the parylene-C layers grew, which caused reverse bias shifts in the TFT devices. (C) 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
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