Epitaxial La0.7Sr0.3MnO3 thin films grown on SrTiO3 buffered silicon substrates by reactive molecular-beam epitaxy

La0.7Sr0.3MnO3 (LSMO) thin films (with a thickness of 10, 20, 60, 75, and 100?nm) were grown on SrTiO3 (STO)-buffered silicon (001) substrates by reactive molecular-beam epitaxy. X-ray diffraction (XRD) revealed the heterostructures to be fully epitaxial with orientation relationship (001) LSMO || (001) STO || (001) Si and [100] LSMO || [100] STO || [110] Si. Root mean square roughness was about 0.5?nm as measured by atomic force microscopy (AFM) for films of 1075?nm thicknesses, and about 1?nm for the 100?nm thick LSMO film. Normalized Hooge parameters in the (0.95 +/- 0.25) x 10(-30)(3.41 +/- 0.71) x 10(-30)?m3 range were measured at 300?K, which are comparable to the noise level typically measured in the best LSMO films on (001) STO substrates. Overall these very low noise LSMO films with thicknesses in the 10100?nm range grown on STO/Si showed properties rivaling those of LSMO films deposited on (001) STO single crystal substrates, thus demonstrating their potential use for LSMO-based devices on silicon substrates.