Transparent indium tin oxide as inkjet-printed thin film electrodes for organic field-effect transistors

Indium tin oxide (ITO) thin films can be manufactured by spincoating or inkjet printing of a solution containing indium and tin oximato precursor complexes. After sintering at 600 degrees C and annealing in reducing atmosphere, resistivities as low as 2.34 x 10-3Ocm were observed, with a transparency of more than 95% in the visible region. The employment of an amorphous hafnia interlayer on top of a silicon dioxide dielectric was found to improve the wetting behaviour significantly. Thus sourcedrain structures could be obtained by inkjet-printing and field-effect transistors were constructed using poly(3-hexylthiophene) (P3HT) as organic semiconductor.