期刊
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
卷 208, 期 2, 页码 449-452出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/pssa.201000509
关键词
HFETs; MBE; microwave performance; ZnO
资金
- Ministry of Education, Culture, Sports, Science and Technology, Japan [22560353]
- Grants-in-Aid for Scientific Research [22560353] Funding Source: KAKEN
We report the first microwave performance of single crystalline ZnO/ZnMgO heterostructure field-effect transistors (HFETs). The structure consisted of a 15-nm-thick ZnO channel layer was grown by molecular beam epitaxy (MBE) on an a-sapphire substrate. Two-finger type HFETs with 1 or 2-mu m-long gate were fabricated and measured for microwave performance. The transconductance of the HFETs are 28 and 23 mS/mm for 1 and 2-mu m-gate devices, respectively. The microwave measurement of ZnO-based TFTs revealed that the current gain cutoff frequency f(T) of 1.75 GHz and that of unilateral power gain f(max) of 2.45 GHz for 1-mu m-gate HFET. Electron velocity obtained by two-terminal measurements implies that the structural design is crucial for further improvement of the high-frequency performance of ZnO/ZnMgO HFETs. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
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