In-plane gate transistors implanted with different channel geometries by focussed ion beam in positive mode pattern definition technique

In-plane gate (IPG) transistors with various channel geometries have been fabricated by focus ion beam implantation technique in positive pattern definition mode on GaAs/Al(x)Ga(1-x)As heterostructures. Both n- and p-type channel transistors were obtained for either n- or p-doped heterostructures, by implantation of the channnel or the gate regions with the complementary dopant type to compensate the initial doping. The current-voltage charactristics showed that the channel can be fully controlled by a gate bias, i.e., it can be completely depleted or enhanced, but two gates are needed to control the channel. Different channel geometries were studied, the most efficient being the Z-shaped one. The n-type channel IPG transistors present source-drain currents of few hundreds of microamperes, which is two to three orders of magnitudes higher than that for the p-type channel ones. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim