期刊
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
卷 207, 期 5, 页码 1083-1086出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/pssa.200983120
关键词
InN films; MBE; Si doping; positron annihilation; vacancy formation
The introduction of vacancy type point defects by Si doping in InN grown by plasma-assisted molecular beam epitaxy was studied using a monoenergetic positron beam. With the combination of positron lifetime and Doppler broadening measurements, compensating In-vacancy (V-In) acceptors were identified in the material. For increasing Si doping an enhanced formation of V-In, defects was observed, up to a concentration of c(V) = 7 x 10(17) cm(-3) in the highest doped sample (n(e) = 6.6 x 10(20) cm(-3)). A strong inhomogeneity of the defect profile with a significant increase of the V-In, concentration toward the layer/substrate interface could be detected. Additionally, larger vacancy clusters containing several V-In are formed in the proximity of the interface. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
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