期刊
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
卷 207, 期 1, 页码 224-228出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/pssa.200925244
关键词
-
资金
- Republic of China National Science Council [NSC 95-2221-E-033-073]
AlN, an important semiconductor with the widest band gap among III-nitrides, was employed to construct solar blind metal-semiconductor-metal photodetectors (MSM-PDs). MSM-PDs were fabricated on AlN epitaxial thin films deposited on GaN/sapphire using a helicon sputtering system at a low temperature of 300 degrees C. The dark current of the device is as low as 200 fA at 20 V and the photocurrent illuminated by a D-2 lamp increases more than two orders of magnitude. The photocurrent increases almost linearly with the incident optical power at the wavelength of 200 nm. The results show that the low temperature grown AlN MSM device is suitable for the application of deep UV detection. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据