4.4 Article

UV laser modification and selective ion-beam etching of amorphous vanadium pentoxide thin films

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WILEY-V C H VERLAG GMBH
DOI: 10.1002/pssa.200824175

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资金

  1. Svenska Institutet [Dnr: 01370/2006]
  2. Ministry of Education and Science of Russian Federation
  3. U.S. CRDF grant [RUX0-013-PZ-06]

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We present the results on excimer laser modification and patterning of amorphous vanadium pentoxide films. Wet positive resist-type and Ar ion-beam negative resist-type etching techniques were employed to develop UV-modified films. V2O5 films were found to possess sufficient resistivity compared to standard electronic materials thus to be promising masks for sub-micron lithography. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

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