Growth and characterization of gallium oxide thin films by radiofrequency magnetron sputtering

Undoped and Neodymium-doped gallium oxide (Ga2O3) thin films of about 500 nm thickness were successfully grown at different temperatures ranging from 100 up to 600 degrees C by radiofrequency magnetron sputtering. Post-annealing treatments were carried Out at 900 degrees C and 1000 degrees C. The obtained films were (400) textured and a grain size of a few tens of nanometres was found. Optical and electrical characterizations led to a figure of merit of about 1.9 x 10(-4). These films were successfully doped with Neodymium by a co-sputtering method. The photoluminescence experiments for the Nd-doped beta-Ga2O3 films clearly showed the rare-earth emitting signature. (c) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.