Visible and infrared electroluminescence from an Er-doped n-ZnO/p-Si light emitting diode

Er-doped ZnO/Si hetero-junctions have been formed by laser ablating an Er-contained ZnO target onto p-Si(100) substrates. Light emitting diodes fabricated by using these samples exhibited bright green (536 nm and 556 nm), red (665 nm) and 1.54 mu m emissions at room temperature. A light emission at 1180 nm was also observed. These emissions arose from intra-4f transitions in Er3+ ions that were excited by impact excitation process. A threshold voltage of similar to 10 V was achieved for emitting multi colors. Our results show a strong possibility of realizing the Si-based light emitting devices by Er doing. (c) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.