期刊
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
卷 205, 期 7, 页码 1575-1579出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/pssa.200723192
关键词
-
Chlorine-doped ZnO thin films were grown by MOCVD on sapphire and fused silica. Chlorine is incorporated in substitution for oxygen and acts as a donor, leading to an increase of electron concentration. Transport properties were studied for samples with different chlorine content. Hall effect measurements show the increase of electron carrier concentration and decrease of electron mobility on increasing the amount of chlorine incorporated in ZnO. Carrier concentrations as high as 6.5 X 10(20) cm(-3) has been achieved with a resistivity of rho = 1.4 x 10(-3) Omega cm for layers deposited on sapphire substrate. (c) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据