期刊
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
卷 205, 期 11, 页码 2518-2521出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/pssa.200780191
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In this paper, we present a new simulation approach for quantum transport in short and thin MOSFET channels which is based on a deterministic resolution of 1D Wigner Transport Equation and its couplings with 2D Poisson and 1D Schrodinger equations. (C) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
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